The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Nov. 18, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Jung Huang, Hsinchu, TW;

Li-Hsin Chu, Hsinchu, TW;

Po-Feng Tsai, Hsinchu, TW;

Henry Peng, Hsinchu, TW;

Kuang Huan Hsu, Hsinchu, TW;

Tsung Wei Chen, Hsinchu, TW;

Yung-Lin Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); C23C 14/54 (2006.01); C23C 14/48 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); C23C 14/48 (2013.01); C23C 14/54 (2013.01); H01L 22/14 (2013.01);
Abstract

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.


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