The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2023

Filed:

Jul. 22, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Innocenzo Tortorelli, Cernusco sul Naviglio, IT;

Stephen Tang, Fremont, CA (US);

Christina Papagianni, San Jose, CA (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 2013/005 (2013.01); G11C 2013/0052 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/76 (2013.01); G11C 2213/77 (2013.01);
Abstract

Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.


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