The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Sep. 30, 2021
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Stmicroelectronics International N.v., Geneva, CH;
Laura Capecchi, Vedano al Lambro, IT;
Marcella Carissimi, Treviolo, IT;
Marco Pasotti, Travaco' Siccomario, IT;
Vikas Rana, Noida, IN;
Vivek Tyagi, Ghaziabad, IN;
STMicroelectronics S.r.l., Agrate Brianza, IT;
STMicroelectronics International N.V., Geneva, CH;
Abstract
A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.