The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Aug. 18, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tsai-Hao Hung, Hsinchu, TW;
Shih-Chi Kuo, Yangmei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 13/0007 (2013.01); H01L 27/2436 (2013.01); H01L 45/085 (2013.01); H01L 45/124 (2013.01); H01L 45/14 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01); G11C 2213/32 (2013.01); H01L 45/1206 (2013.01);
Abstract
A memory includes: a first electrode comprising a top boundary and a sidewall; a resistive material layer, disposed above the first electrode, that comprises at least a first portion and a second portion coupled to a first end of the first portion, wherein the resistive material layer presents a variable resistance value; and a second electrode disposed above the resistive material layer.