The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Jul. 22, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Mark D. Levy, Williston, VT (US);

Edward W. Kiewra, South Burlington, VT (US);

Siva P. Adusumilli, South Burlington, VT (US);

John J. Ellis-Monaghan, Grand Isle, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/868 (2006.01); H01L 31/107 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 29/0649 (2013.01); H01L 29/66136 (2013.01); H01L 31/107 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.


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