The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Dec. 16, 2020
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Shay Reboh, Grenoble, FR;

Pablo Acosta Alba, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76243 (2013.01); H01L 21/76254 (2013.01); H01L 23/66 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.


Find Patent Forward Citations

Loading…