The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Nov. 20, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsiao-Tsung Yen, Tainan, TW;
Cheng-Wei Luo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.