The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Jul. 28, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kengo Kurose, Suginami Tokyo, JP;

Masanobu Shirakawa, Chigasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 29/04 (2006.01); H04L 1/00 (2006.01); H03M 13/00 (2006.01); H03M 13/11 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01);
Abstract

A memory system includes a semiconductor storage device and a memory controller including a storage circuit that stores correction value for read voltages in association with the word line, and a control circuit that reads data from the memory cells, performs a correction operation on the read data to determine a number of error bits therein, determines the correction value for each read voltage based on the number of error bits and a ratio of a lower tail fail bit count and an upper tail fail bit count, and stores the correction values for the read voltages in the storage circuit. The lower tail fail bit count represents the number of memory cells in a first state having threshold voltages of an adjacent state, and the upper tail fail bit count represents the number of memory cells in the adjacent state having threshold voltages of the first state.


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