The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Feb. 24, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object is to reduce the influence of noise due to electric conduction carriers trapped between the surface of a silicon substrate and an oxide and thus achieve strain detection with a high S/N ratio. This semiconductor strain detection element includes: a silicon substrate; and a first impurity diffusion layer having a conduction type different from the silicon substrate, the first impurity diffusion layer being formed inside under a surface of the silicon substrate, wherein an amount of strain in the silicon substrate is detected on the basis of change in a resistance of the first impurity diffusion layer.
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