The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
May. 10, 2021
Micron Technology, Inc., Boise, ID (US);
John D. Hopkins, Meridian, ID (US);
Shyam Surthi, Boise, ID (US);
Micron Technology, Inc., Baise, ID (US);
Abstract
Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and wordline levels. The wordline levels have primary regions of a first vertical thickness, and have terminal projections of a second vertical thickness which is greater than the first vertical thickness. The terminal projections include control gate regions. Charge-blocking regions are adjacent the control gate regions, and are vertically spaced from one another. Charge-storage regions are adjacent the charge-blocking regions and are vertically spaced from one another. Gate-dielectric material is adjacent the charge-storage regions. Channel material is adjacent the gate dielectric material. Some embodiments included methods of forming integrated assemblies.