The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2023
Filed:
Apr. 22, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Daniel Porwol, Straubing, DE;
Thomas Fischer, Regensburg, DE;
Uwe Seidel, Munich, DE;
Anton Steltenpohl, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3164 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 21/6836 (2013.01); H01L 23/295 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01);
Abstract
An electronic component includes a mold layer and a semiconductor die including a low ohmic first portion and a high ohmic second portion. The low ohmic first portion has an active area. The high ohmic second portion is arranged on the mold layer.
Porwol, Daniel. (2023). Electronic component with semiconductor die having a low ohmic portion with an active area and a high ohmic portion on a dielectric layer (U.S. Patent No. 11605572). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11605572
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile