The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
May. 06, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Ningbo Semiconductor International Corporation, Ningbo, CN;
Herb He Huang, Shanghai, CN;
Clifford Ian Drowley, Shanghai, CN;
Jiguang Zhu, Shanghai, CN;
Halting Li, Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, Shanghai, CN;
NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION, Ningbo, CN;
Abstract
A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.