The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Dec. 21, 2016
Applicant:
Soitec, Bernin, FR;
Inventors:
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/312 (2013.01); H01L 41/319 (2013.01); H03H 3/02 (2006.01); H01L 41/187 (2006.01); C30B 25/18 (2006.01); C30B 29/22 (2006.01); H01L 41/08 (2006.01); H01L 41/09 (2006.01); H01L 41/335 (2013.01); H03H 3/08 (2006.01); H03H 9/25 (2006.01); H03H 9/54 (2006.01); H03H 9/64 (2006.01); H01L 41/316 (2013.01); C30B 29/30 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1873 (2013.01); C30B 25/186 (2013.01); C30B 29/22 (2013.01); H01L 41/0815 (2013.01); H01L 41/09 (2013.01); H01L 41/312 (2013.01); H01L 41/319 (2013.01); H01L 41/335 (2013.01); H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/25 (2013.01); H03H 9/54 (2013.01); H03H 9/64 (2013.01); C30B 29/30 (2013.01); H01L 41/316 (2013.01);
Abstract
A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called 'seed layer' of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.