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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11600728 B1

PDFFull Text
Date of Patent:
Mar. 07, 2023

Filed:

Jun. 15, 2020

Method of manufacturing a facet-free source/drain epitaxial structure having an amorphous or polycrystalline layer

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wen-Hsien Tu, Hsinchu, TW;

Wei-Fan Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02609 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01);
Abstract

The present disclosure is directed to source/drain (S/D) epitaxial structures with enlarged top surfaces. In some embodiments, the S/D epitaxial structures include a first crystalline epitaxial layer comprising facets; a non-crystalline epitaxial layer on the first crystalline layer; and a second crystalline epitaxial layer on the non-crystalline epitaxial layer, where the second crystalline epitaxial layer is substantially facet-free.

Find Patent Forward Citations

Tu, Wen-Hsien. (2023). Method of manufacturing a facet-free source/drain epitaxial structure having an amorphous or polycrystalline layer (U.S. Patent No. 11600728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11600728

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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