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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11600716 B1

PDFFull Text
Date of Patent:
Mar. 07, 2023

Filed:

Nov. 30, 2020

Method for forming semiconductor structure with contact over source/drain structure

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Andrew Joseph Kelly, Hengshan Township, TW;

Yusuke Oniki, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); B82Y 10/00 (2011.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); B82Y 10/00 (2013.01); H01L 21/32134 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/068 (2013.01);
Abstract

Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.

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