The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Apr. 06, 2021
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/308 (2006.01); H01L 21/31 (2006.01); H01L 21/04 (2006.01); H01L 21/311 (2006.01); H01L 21/426 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02019 (2013.01); H01L 21/0334 (2013.01); H01L 21/046 (2013.01); H01L 21/0415 (2013.01); H01L 21/3083 (2013.01); H01L 21/31 (2013.01); H01L 21/311 (2013.01); H01L 21/426 (2013.01); H01L 29/0615 (2013.01); H01L 29/0623 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/66924 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/8083 (2013.01);
Abstract
A silicon carbide substrate has a trench extending from a main surface of the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width at a trench bottom. A shielding region is formed in the silicon carbide substrate. The shielding region extends along the trench bottom. In at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration. The first width is less than the trench width and is at least 30% of the trench width.