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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11600552 B1

PDFFull Text
Date of Patent:
Mar. 07, 2023

Filed:

Jun. 10, 2021

Semiconductor device having a through silicon via and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju-Bin Seo, Seongnam-si, KR;

Su-Jeong Park, Hwaseong-si, KR;

Tae-Seong Kim, Suwon-si, KR;

Kwang-Jin Moon, Hwaseong-si, KR;

Dong-Chan Lim, Hwaseong-si, KR;

Ju-Il Choi, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Omar F Mojaddedi

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 27/146 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76829 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76844 (2013.01); H01L 21/76871 (2013.01); H01L 21/76873 (2013.01); H01L 21/76898 (2013.01); H01L 23/3128 (2013.01); H01L 27/14636 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.

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