The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Sep. 15, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Bo Xie, San Jose, CA (US);
Ruitong Xiong, Santa Clara, CA (US);
Sure K. Ngo, Dublin, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Yijun Liu, Santa Clara, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (κ value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.