The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Feb. 03, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shuji Azumo, Nirasaki, JP;

Shinichi Ike, Gyeonggi-do, KR;

Yumiko Kawano, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/01 (2006.01); C23C 16/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
C23C 16/04 (2013.01); C23C 16/01 (2013.01); C23C 16/0272 (2013.01); C23C 16/403 (2013.01); C23C 16/45525 (2013.01); H01L 21/0228 (2013.01); H01L 21/823857 (2013.01);
Abstract

A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.


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