The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Feb. 24, 2020
Applicant:

Sky Tech Inc., Zhubei, TW;

Inventors:

Jing-Cheng Lin, Zhubei, TW;

Yao-Syuan Cheng, Zhubei, TW;

Assignee:

SKY TECH INC., Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/56 (2006.01); C23C 14/54 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 14/566 (2013.01); C23C 14/0641 (2013.01); C23C 14/541 (2013.01); H01L 21/02318 (2013.01);
Abstract

The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.


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