The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

Feb. 11, 2022
Applicant:

Disco Corporation, Toyo, JP;

Inventors:

Ryohei Yamamoto, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/364 (2014.01); B28D 5/00 (2006.01); B24B 1/00 (2006.01); B23K 26/08 (2014.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/364 (2015.10); B23K 26/0853 (2013.01); B24B 1/00 (2013.01); B28D 5/0011 (2013.01); H01L 21/02378 (2013.01); H01L 21/67092 (2013.01); B23K 2103/52 (2018.08); B28D 5/0094 (2013.01);
Abstract

A wafer producing apparatus detects a facet area from an upper surface of an SiC ingot, sets X and Y coordinates of plural points lying on a boundary between the facet area and a nonfacet area in an XY plane, and sets a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot. The predetermined depth corresponds to the thickness of the SiC wafer to be produced. A control unit increases the energy of the laser beam and raises a position of the focal point in applying the laser beam to the facet area as compared with the energy of the laser beam and a position of the focal point in applying the laser beam to the nonfacet area, according to the X and Y coordinates.


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