The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Apr. 22, 2021
Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventor:

Keita Matsuda, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/50 (2006.01); H01L 21/48 (2006.01); H01L 21/60 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/4846 (2013.01); H01L 21/50 (2013.01); H01L 23/49816 (2013.01); H01L 24/13 (2013.01); H01L 2021/60232 (2013.01); H01L 2224/13009 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.


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