The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jun. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Garam Kim, Seongnam-si, KR;

Hyunggon Kim, Hwaseong-si, KR;

Jisang Lee, Iksan-si, KR;

Joonsuc Jang, Hwaseong-si, KR;

Wontaeck Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/34 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

A memory device includes a memory cell array including a plurality of memory cells; a voltage generator configured to generate voltages used for a program operation and a verify operation for the memory cells; and control logic configured to perform a plurality of program loops while writing data to the memory cell array, such that first to N-th (e.g., N>=1) program loops including a program operation and a verify operation are performed and at least two program loops in which the verify operation is skipped are performed when a pass/fail determination of the program operation in the N-th program loop indicates a pass.


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