The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Jul. 28, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongchul Shin, Suwon-si, KR;
Boram Kim, Hwaseong-si, KR;
Younghwan Park, Seongnam-si, KR;
Jongseob Kim, Seoul, KR;
Joonyong Kim, Seoul, KR;
Junhyuk Park, Pohang-si, KR;
Jaejoon Oh, Seongnam-si, KR;
Minchul Yu, Suwon-si, KR;
Soogine Chong, Seoul, KR;
Sunkyu Hwang, Seoul, KR;
Injun Hwang, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.