The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Dec. 02, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Alexander M. Derrickson, Saratoga Springs, NY (US);

Mankyu Yang, Fishkill, NY (US);

Richard F. Taylor, III, Campbell, CA (US);

Jagar Singh, Clifton Park, NY (US);

Alexander L. Martin, Greenfield Center, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H03K 17/60 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7394 (2013.01); H01L 29/0653 (2013.01); H01L 29/1008 (2013.01); H03K 17/60 (2013.01);
Abstract

Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.


Find Patent Forward Citations

Loading…