The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Dec. 13, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Asli Sahin, Danbury, CT (US);

Thomas F. Houghton, Marlboro, NY (US);

Jennifer A. Oakley, Cohoes, NY (US);

Jeremy S. Alderman, New Rochelle, NY (US);

Karen A. Nummy, Newburgh, NY (US);

Zhuojie Wu, Port Chester, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/42 (2006.01); H01L 23/00 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); G02B 6/4243 (2013.01); G02B 6/4248 (2013.01); G02B 6/4251 (2013.01); H01L 23/562 (2013.01); G02B 6/12 (2013.01); G02B 2006/12061 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a moisture seal for photonic devices and methods of manufacture. The structure includes: a first trench in at least one substrate material; a guard ring structure with an opening and which at least partially surrounds the first trench; and a second trench at a dicing edge of the substrate, the second trench being lined on sidewalls with barrier material and spacer material over the barrier material.


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