The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Dec. 02, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Poornika Fernandes, Murphy, TX (US);

Ye Shao, Plano, TX (US);

Guruvayurappan S. Mathur, Plano, TX (US);

John K. Arch, Richardson, TX (US);

Paul Stulik, Tuscon, AZ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/522 (2006.01); H01G 15/00 (2013.01); H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01G 15/00 (2013.01); H01L 23/5226 (2013.01); H01G 4/06 (2013.01);
Abstract

An integrated circuit (IC) includes a substrate and a first capacitor on the substrate. The first capacitor has a first width. A first dielectric layer is provided on a side of the first capacitor opposite the substrate. Further, a second capacitor is present on a side of the first dielectric layer opposite the first capacitor. The second capacitor has a second width that is smaller than the first width. The IC also has a second dielectric layer and a first metal layer. The second dielectric layer is on a side of the second capacitor opposite the first dielectric layer. The first metal layer is on a side of the second dielectric layer opposite the second capacitor.


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