The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Oct. 01, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A semiconductor device and fabrication method thereof are provided. The fabrication method include: providing a to-be-etched material layer; forming a plurality of discrete sacrificial layers on the to-be-etched material layer; forming first initial spacers on sidewalls of each of the discrete sacrificial layers. Each first initial spacer includes a first bottom region and a first top region on the first bottom region; removing the discrete sacrificial layers. The method further includes: removing the first top region of each first initial spacer to form a first spacer from each first bottom region; forming second spacers on sidewalls of each of the first spacers. Each second spacer includes a second bottom region and a second top region on the second bottom region; removing the first spacers; The method further includes: removing the second top regions by etching; and etching the to-be-etched material layer by using the second spacers as a mask.