The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
May. 10, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Zengtao T. Liu, Boise, ID (US);
Kirk D. Prall, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 8/08 (2013.01); G11C 13/003 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0033 (2013.01); G11C 13/0038 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0057 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/77 (2013.01);
Abstract
The apparatuses and methods described herein may operate to measure a voltage difference between a selected access line and a selected sense line associated with a selected cell of a plurality of memory cells of a memory array. The voltage difference may be compared with a reference voltage specified for a memory operation. A selection voltage(s) applied to the selected cell for the memory operation may be adjusted responsive to the comparison, such as to dynamically compensate for parasitic voltage drop.