The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Aug. 05, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Josephine Tiu Hamada, Folsom, CA (US);
Kenneth Richard Surdyk, Folsom, CA (US);
Lingming Yang, Meridian, ID (US);
Mingdong Cui, Folsom, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/56 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5678 (2013.01); G11C 11/4074 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01);
Abstract
An integrated circuit memory device, having: a first wire; a second wire; a memory cell connected between the first wire and the second wire; a first voltage driver connected to the first wire; and a second voltage driver connected to the second wire. During an operation to read the memory cell, the second voltage driver is configured to start ramping up a voltage applied on the second wire after the first voltage driver starts ramping up and holding a voltage applied on the first wire.