The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Jan. 10, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Rahul Mitchell Jairaj, Boise, ID (US);

Mark A. Hawes, Boise, ID (US);

Terry M. Grunzke, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G06F 11/07 (2006.01); G06F 11/14 (2006.01); G06F 11/30 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G06F 11/0772 (2013.01); G06F 11/1048 (2013.01); G06F 11/1489 (2013.01); G06F 11/3037 (2013.01);
Abstract

Devices and techniques to recover data from a memory device using a custom Read Retry feature are disclosed herein. A memory device can receive a first read request, read data from the memory array corresponding to the read request, and determine if the read data corresponding to the first read request includes a detectable error. In response to a detected error in the received data corresponding to the first read request, the memory device can recover data corresponding to the first read request using one of a set of read retry features, and load the one of the set of read retry features used to recover data corresponding to the first read request as a custom read retry feature in the memory device for a second read request subsequent to the first read request.


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