The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Feb. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tao-Cheng Liu, Hsinchu, TW;

Tsai-Hao Hung, Hsinchu, TW;

Shih-Chi Kuo, Yangmei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/122 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 5/1819 (2013.01); G02B 5/1857 (2013.01); G02B 6/1225 (2013.01); H01L 21/3086 (2013.01); H01L 21/30608 (2013.01);
Abstract

A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.


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