The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Aug. 27, 2019
Applicant:

Lintec Corporation, Itabashi-ku, JP;

Inventors:

Wataru Morita, Saitama, JP;

Kunihisa Kato, Warabi, JP;

Tsuyoshi Muto, Saitama, JP;

Yuma Katsuta, Gyoda, JP;

Assignee:

LINTEC CORPORATION, Itabashi-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/34 (2006.01); H01L 35/16 (2006.01);
U.S. Cl.
CPC ...
H01L 35/34 (2013.01); H01L 35/16 (2013.01);
Abstract

The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.


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