The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Jun. 08, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Shishi Jiang, Santa Clara, CA (US);
Pramit Manna, Sunnyvale, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/50 (2006.01); C23C 16/30 (2006.01); C23C 16/24 (2006.01); C23C 16/34 (2006.01); C23C 16/32 (2006.01); C23C 16/36 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/50 (2013.01); C23C 16/24 (2013.01); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/28518 (2013.01);
Abstract
PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.