The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Feb. 02, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Andrea Gotti, Boise, ID (US);

Pavan Reddy K. Aella, Eagle, ID (US);

Dale W. Collins, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01L 45/1683 (2013.01);
Abstract

Methods, systems, and devices for techniques for forming memory structures are described. Forming a memory structure may include etching a stack of material including a conductive line, a first electrode and a sacrificial material to divide the stack of material into multiple sections. The process may further include depositing an oxide material in each of the first quantity of channels to form multiple oxide materials. The sacrificial material may be etched to form a second channel between two oxide materials of the multiple oxide materials. Memory material may be deposited over the two oxide materials and the second channel, which may create a void in the second channel between the memory material and the first electrode. The memory material may be heated to fill the void in the second channel.


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