The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Sep. 08, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yu-Hsing Chang, Taipei, TW;

Chern-Yow Hsu, Hsin-Chu County, TW;

Shih-Chang Liu, Kaohsiung County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/94 (2006.01); H01L 21/027 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); H01L 21/0271 (2013.01); H01L 21/76877 (2013.01); H01L 23/5223 (2013.01); H01L 28/40 (2013.01); H01L 28/87 (2013.01);
Abstract

A method of forming a semiconductor device includes: depositing a first conductive plate and a second conductive plate adjacent to the first conductive plate; depositing a first insulating plate on the first conductive plate and the second conductive plate; depositing a third conductive plate on the first insulating plate; depositing a second insulating plate on the third conductive plate; forming a fourth conductive plate on the second insulating plate; forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate; and forming a second conductive via penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate.


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