The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

May. 10, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Han-Chin Chiu, Kaohsiung, TW;

Cheng-Yuan Tsai, Hsin-Chu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 29/66 (2006.01); H01L 23/29 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 23/291 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract

A semiconductor device includes a compound semiconductor layer comprising a III-V material; a first layer on the compound semiconductor layer and comprising oxygen, nitrogen, and a material included in the compound semiconductor layer; a second layer over the first layer, wherein at least a portion of the second layer comprises a single crystalline structure or a polycrystalline structure; a dielectric layer over the second layer; and a source/drain electrode extending through the dielectric layer, the second layer, and the first layer and into the compound semiconductor layer.


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