The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Apr. 26, 2021
International Business Machines Corporation, Armonk, NY (US);
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Nicolas Loubet, Guilderland, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Guillaume Audoit, Bourgoin Jallieu, FR;
Nicolas Bernier, Le Sappey en Chartreuse, FR;
Remi Coquand, Les marches, FR;
Shay Reboh, Labuisse, FR;
Abstract
Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.