The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

May. 25, 2021
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Tohru Shirakawa, Matsumoto, JP;

Yasunori Agata, Matsumoto, JP;

Kaname Mitsuzuka, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0626 (2013.01); H01L 29/0623 (2013.01); H01L 29/0696 (2013.01); H01L 29/0821 (2013.01); H01L 29/7397 (2013.01);
Abstract

Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.


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