The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Aug. 11, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Marko Milojevic, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 27/146 (2006.01); H01L 27/11556 (2017.01); H01L 27/11524 (2017.01); H01L 45/00 (2006.01); H01L 21/762 (2006.01); H04N 21/422 (2011.01); H04N 21/21 (2011.01); H01L 27/11521 (2017.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/76264 (2013.01); H01L 23/5226 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/14636 (2013.01); H01L 45/1233 (2013.01); H04N 21/21 (2013.01); H04N 21/4222 (2013.01); H01H 2231/002 (2013.01);
Abstract

A microelectronic device comprises pillar structures extending vertically through an isolation material, conductive lines electrically coupled to the pillar structures, contact structures between the pillar structures and the conductive lines, and interconnect structures between the conductive lines and the contact structures. The conductive lines comprise one or more of titanium, ruthenium, aluminum, and molybdenum. The interconnect structures comprise a material composition that is different than one or more of a material composition of the contact structures and a material composition of the conductive lines. Related memory devices, electronic systems, and methods are also described.


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