The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Aug. 27, 2020
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Ping Hsu, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/532 (2006.01); H01L 21/3213 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76889 (2013.01); H01L 21/32133 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/53209 (2013.01);
Abstract
The present application relates to a semiconductor device with an intervening layer and a method for fabricating the semiconductor device with the intervening layer. The semiconductor device includes a substrate, a bottom conductive plug positioned on the substrate, an intervening conductive layer positioned on the bottom conductive plug, and a top conductive plug positioned on the intervening conductive layer. A top surface of the intervening conductive layer is non-planar.