The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Jun. 08, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Chang Yu, Hsinchu, TW;

Ta-Ching Yeh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/08 (2006.01); G11C 7/06 (2006.01); G11C 7/12 (2006.01); G11C 5/06 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 5/063 (2013.01); G11C 7/062 (2013.01); G11C 7/10 (2013.01); G11C 7/12 (2013.01); G11C 2207/06 (2013.01);
Abstract

A semiconductor device includes: a sense amplifier; a branched line selectively connectable to the amplifier; an array of bit lines connected to corresponding memory cells; and an intra-sense-amplifier recycling arrangement configured to do as follows including: recovering a first charge from a first bit line associated with a first one of the memory cells, the first charge being associated with a preceding first evaluation performed by the sense amplifier; and boosting the branched line to a reference voltage including reusing the first charge to at least partially charge the branched line; and wherein the sense amplifier is configured to make a second evaluation of a stored value in a second memory cell relative to the reference voltage.


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