The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Jun. 05, 2019
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Yoshitaka Iwaki, Fujisawa, JP;

Yuji Nakajima, Hamamatsu, JP;

Toshiki Yamada, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G01R 31/26 (2020.01); G01R 31/265 (2006.01); G01R 31/311 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0053 (2013.01); G01R 31/2601 (2013.01); G01R 31/2656 (2013.01); G01R 31/311 (2013.01);
Abstract

An inspection device includes a reference signal output section, a noise removal section, and an electrical characteristic measurement section. The reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The noise removal section outputs a noise removal signal obtained by removing a noise component of the output of the external power supply device from the current signal output from the semiconductor sample based on the reference signal. The electrical characteristic measurement section measures the electrical characteristic of the semiconductor sample based on the noise removal signal. The inspection device measures the electrical characteristic of the semiconductor sample to which a voltage is being applied by the external power supply device and which is being irradiated and scanned with light. The inspection device outputs a defective portion of the semiconductor sample based on the electrical characteristic.


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