The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Sep. 14, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Bo Xie, San Jose, CA (US);
Ruitong Xiong, Santa Clara, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Yijun Liu, Santa Clara, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Sure K. Ngo, Dublin, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NFplasma effluents, and greater than or about 1000 sccm of Oplasma effluents.