The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Jun. 01, 2021
Applicants:
Shibaura Institute of Technology, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama, JP;
Inventors:
Atsushi Yumoto, Tokyo, JP;
Mari Shimizu, Tokyo, JP;
Tetsuo Inoue, Kanagawa, JP;
Takashi Hino, Kanagawa, JP;
Shuichi Saito, Kanagawa, JP;
Assignees:
SHIBAURA INSTITUTE OF TECHNOLOGY, Tokyo, JP;
TOSHIBA MATERIALS CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/072 (2006.01); H01L 21/67 (2006.01); H01L 23/373 (2006.01); H05B 3/12 (2006.01); C23C 14/06 (2006.01); C23C 26/00 (2006.01); C23C 24/04 (2006.01); C23C 14/28 (2006.01); H05B 3/06 (2006.01); H05B 3/84 (2006.01);
U.S. Cl.
CPC ...
C01B 21/0728 (2013.01); C23C 14/0617 (2013.01); C23C 14/28 (2013.01); C23C 24/04 (2013.01); C23C 26/00 (2013.01); H01L 21/67103 (2013.01); H01L 23/3731 (2013.01); H05B 3/06 (2013.01); H05B 3/12 (2013.01); H05B 3/84 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2002/76 (2013.01); C01P 2006/40 (2013.01); C01P 2006/90 (2013.01);
Abstract
An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.