The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Jun. 17, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Saba Zare, Albany, NY (US);

Michael Rizzolo, Delmar, NY (US);

Mona A. Ebrish, Albany, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01F 41/34 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01F 41/34 (2013.01); H01L 43/02 (2013.01);
Abstract

A method of manufacturing a magnetic random access memory device includes depositing a liner on an intermediate device including an opening in a sacrificial dielectric layer, depositing a conductive metal over the liner and in the opening, removing a portion of the conductive metal while preserving the liner and a thickness of the sacrificial dielectric layer, removing a first portion of the liner by etching, wherein the liner is recessed into the opening, depositing a plurality of metallic tunnel junction layers, forming a hardmask on the plurality of metallic tunnel junction layers, and patterning the metallic tunnel junction layers to form a metallic tunnel junction stack and simultaneously clear a second portion of the liner and a portion the sacrificial dielectric layer.


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