The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Apr. 14, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young Jo Tak, Seongnam-si, KR;

Joo Sung Kim, Seongnam-si, KR;

Jong Uk Seo, Hwaseong-si, KR;

Dong Gun Lee, Hwaseong-si, KR;

Yong Il Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 33/52 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 25/0753 (2013.01); H01L 33/385 (2013.01); H01L 33/52 (2013.01); H01L 33/62 (2013.01); H01L 2933/005 (2013.01);
Abstract

A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.


Find Patent Forward Citations

Loading…