The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Jul. 08, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate and an interconnection region disposed on the semiconductor substrate. The interconnection region includes stacked metallization levels, a magnetic tunnel junction, and a transistor. The magnetic tunnel junction is formed on a first conductive pattern of a first metallization level of the stacked metallization levels. The transistor is formed on a second conductive pattern of a second metallization level of the stacked metallization levels. The transistor is a vertical gate-all-around transistor. A drain contact of the transistor is electrically connected to the magnetic tunnel junction by the first conductive pattern of the first metallization level. The second metallization level is closer to the semiconductor substrate than the first metallization level.