The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Aug. 05, 2020
Sandisk Technologies Llc, Addison, TX (US);
Yuki Mizutani, San Jose, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A memory die can include an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures vertically extending through the alternating stack. A first layer stack within the alternating stack includes a first staircase region in which the first electrically conductive layers have respective lateral extents that increase with a vertical distance from the substrate to provide first stepped surfaces. A second layer stack within the alternating stack includes a second staircase region in which the second electrically conductive layers have respective lateral extents that decrease with the vertical distance from the substrate to provide second stepped surfaces. The second layer stack can be more distal from the substrate than the first layer stack. Contact via structures can be formed from the top side and the bottom side of the alternating stack.