The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Oct. 13, 2020
Ememory Technology Inc., Hsin-Chu, TW;
Te-Hsun Hsu, Hsinchu County, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A method for manufacturing a semiconductor structure includes forming a first dielectric layer on a substrate; forming a second dielectric layer on the first dielectric layer; using a photomask to apply a photoresist to cover a first part of the second dielectric layer; removing a second part of the second dielectric layer while retaining the first part of the second dielectric layer; and removing the photoresist. The first part of the second dielectric layer covers a first part of the first dielectric layer in a first area. The second part of the second dielectric layer covers a second part of the first dielectric layer in a second area. The first area is corresponding to a memory device. The second area is corresponding to a logic device.